Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQU4N50TU-WS

FQU4N50TU-WS

For Reference Only

Part Number FQU4N50TU-WS
PNEDA Part # FQU4N50TU-WS
Description MOSFET N-CH 500V 2.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 38,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU4N50TU-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU4N50TU-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU4N50TU-WS, FQU4N50TU-WS Datasheet (Total Pages: 10, Size: 1,046.95 KB)
PDFFQU4N50TU-WS Datasheet Cover
FQU4N50TU-WS Datasheet Page 2 FQU4N50TU-WS Datasheet Page 3 FQU4N50TU-WS Datasheet Page 4 FQU4N50TU-WS Datasheet Page 5 FQU4N50TU-WS Datasheet Page 6 FQU4N50TU-WS Datasheet Page 7 FQU4N50TU-WS Datasheet Page 8 FQU4N50TU-WS Datasheet Page 9 FQU4N50TU-WS Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQU4N50TU-WS Datasheet
  • where to find FQU4N50TU-WS
  • ON Semiconductor

  • ON Semiconductor FQU4N50TU-WS
  • FQU4N50TU-WS PDF Datasheet
  • FQU4N50TU-WS Stock

  • FQU4N50TU-WS Pinout
  • Datasheet FQU4N50TU-WS
  • FQU4N50TU-WS Supplier

  • ON Semiconductor Distributor
  • FQU4N50TU-WS Price
  • FQU4N50TU-WS Distributor

FQU4N50TU-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

SI4336DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.25mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STP2NK100Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1.85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.5Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

499pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF2907ZS-7PPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7580pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

RQ5L020SNTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

170mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96

SUD50N02-06P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 10V

FET Feature

-

Power Dissipation (Max)

6.8W (Ta), 65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

EPCQ64SI16N

EPCQ64SI16N

Intel

IC CONFIG DEVICE 64MBIT 16SOIC

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

DS1338U-33+

DS1338U-33+

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-USOP

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

B350B-13-F

B350B-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMB

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

OKL-T/6-W12P-C

OKL-T/6-W12P-C

Murata Power Solutions

DC DC CONVERTER 0.591-5.5V 30W

PIC18F25K22-I/SO

PIC18F25K22-I/SO

Microchip Technology

IC MCU 8BIT 32KB FLASH 28SOIC

DG9414DQ-T1-E3

DG9414DQ-T1-E3

Vishay Siliconix

IC MULTIPLEXER DUAL 4X1 10MSOP

MAX3387EEUG+T

MAX3387EEUG+T

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP