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FQU4P25TU

FQU4P25TU

For Reference Only

Part Number FQU4P25TU
PNEDA Part # FQU4P25TU
Manufacturer ON Semiconductor
Description MOSFET P-CH 250V 3.1A IPAK
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 490
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

FQU4P25TU Resources

Brand ON Semiconductor
Mfr. Part NumberFQU4P25TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU4P25TU, FQU4P25TU Datasheet (Total Pages: 9, Size: 585.14 KB)
PDFFQD4P25TM Datasheet Cover
FQD4P25TM Datasheet Page 2 FQD4P25TM Datasheet Page 3 FQD4P25TM Datasheet Page 4 FQD4P25TM Datasheet Page 5 FQD4P25TM Datasheet Page 6 FQD4P25TM Datasheet Page 7 FQD4P25TM Datasheet Page 8 FQD4P25TM Datasheet Page 9

FQU4P25TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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