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FQU6N40CTU_NBEA001

FQU6N40CTU_NBEA001

For Reference Only

Part Number FQU6N40CTU_NBEA001
PNEDA Part # FQU6N40CTU_NBEA001
Description MOSFET N-CH 400V 4.5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU6N40CTU_NBEA001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU6N40CTU_NBEA001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU6N40CTU_NBEA001, FQU6N40CTU_NBEA001 Datasheet (Total Pages: 9, Size: 2,243.48 KB)
PDFFQU6N40CTU_NBEA001 Datasheet Cover
FQU6N40CTU_NBEA001 Datasheet Page 2 FQU6N40CTU_NBEA001 Datasheet Page 3 FQU6N40CTU_NBEA001 Datasheet Page 4 FQU6N40CTU_NBEA001 Datasheet Page 5 FQU6N40CTU_NBEA001 Datasheet Page 6 FQU6N40CTU_NBEA001 Datasheet Page 7 FQU6N40CTU_NBEA001 Datasheet Page 8 FQU6N40CTU_NBEA001 Datasheet Page 9

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FQU6N40CTU_NBEA001 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds625pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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