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FQU7N10LTU

FQU7N10LTU

For Reference Only

Part Number FQU7N10LTU
PNEDA Part # FQU7N10LTU
Description MOSFET N-CH 100V 5.8A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 12 - Jul 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU7N10LTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU7N10LTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU7N10LTU, FQU7N10LTU Datasheet (Total Pages: 9, Size: 551.59 KB)
PDFFQU7N10LTU Datasheet Cover
FQU7N10LTU Datasheet Page 2 FQU7N10LTU Datasheet Page 3 FQU7N10LTU Datasheet Page 4 FQU7N10LTU Datasheet Page 5 FQU7N10LTU Datasheet Page 6 FQU7N10LTU Datasheet Page 7 FQU7N10LTU Datasheet Page 8 FQU7N10LTU Datasheet Page 9

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FQU7N10LTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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