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FQU7N20TU

FQU7N20TU

For Reference Only

Part Number FQU7N20TU
PNEDA Part # FQU7N20TU
Description MOSFET N-CH 200V 5.3A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,012
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU7N20TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU7N20TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU7N20TU, FQU7N20TU Datasheet (Total Pages: 9, Size: 802.73 KB)
PDFFQD7N20TM_F080 Datasheet Cover
FQD7N20TM_F080 Datasheet Page 2 FQD7N20TM_F080 Datasheet Page 3 FQD7N20TM_F080 Datasheet Page 4 FQD7N20TM_F080 Datasheet Page 5 FQD7N20TM_F080 Datasheet Page 6 FQD7N20TM_F080 Datasheet Page 7 FQD7N20TM_F080 Datasheet Page 8 FQD7N20TM_F080 Datasheet Page 9

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FQU7N20TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs690mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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