Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GA03JT12-247

GA03JT12-247

For Reference Only

Part Number GA03JT12-247
PNEDA Part # GA03JT12-247
Description TRANS SJT 1200V 3A TO-247AB
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 2,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GA03JT12-247 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGA03JT12-247
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GA03JT12-247, GA03JT12-247 Datasheet (Total Pages: 11, Size: 1,247.96 KB)
PDFGA03JT12-247 Datasheet Cover
GA03JT12-247 Datasheet Page 2 GA03JT12-247 Datasheet Page 3 GA03JT12-247 Datasheet Page 4 GA03JT12-247 Datasheet Page 5 GA03JT12-247 Datasheet Page 6 GA03JT12-247 Datasheet Page 7 GA03JT12-247 Datasheet Page 8 GA03JT12-247 Datasheet Page 9 GA03JT12-247 Datasheet Page 10 GA03JT12-247 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GA03JT12-247 Datasheet
  • where to find GA03JT12-247
  • GeneSiC Semiconductor

  • GeneSiC Semiconductor GA03JT12-247
  • GA03JT12-247 PDF Datasheet
  • GA03JT12-247 Stock

  • GA03JT12-247 Pinout
  • Datasheet GA03JT12-247
  • GA03JT12-247 Supplier

  • GeneSiC Semiconductor Distributor
  • GA03JT12-247 Price
  • GA03JT12-247 Distributor

GA03JT12-247 Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C3A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs460mOhm @ 3A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AB
Package / CaseTO-247-3

The Products You May Be Interested In

SPD08P06PGBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.83A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6.2V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 6.2V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTHD3101FT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

80mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ChipFET™

Package / Case

8-SMD, Flat Lead

ZXMP6A17E6QTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

125mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

637pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-26

Package / Case

SOT-23-6

RV2C001ZPT2L

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

3.8Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 10V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006-3 (VML1006)

Package / Case

SC-101, SOT-883

DMN2450UFB4-7B

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.3nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

56pF @ 16V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

Recently Sold

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

LM358DR

LM358DR

Rohm Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

TAJD337K010RNJ

TAJD337K010RNJ

CAP TANT 330UF 10% 10V 2917

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

TCS3200D-TR

TCS3200D-TR

ams

IC COLOR SENSOR LIGHT-FREQ 8SOIC

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA

UC3844BD1013TR

UC3844BD1013TR

STMicroelectronics

IC REG CTRLR BST FLYBK ISO 8SOIC