Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GA05JT12-263

GA05JT12-263

For Reference Only

Part Number GA05JT12-263
PNEDA Part # GA05JT12-263
Description TRANS SJT 1200V 15A
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 20,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GA05JT12-263 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGA05JT12-263
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GA05JT12-263, GA05JT12-263 Datasheet (Total Pages: 12, Size: 1,266.21 KB)
PDFGA05JT12-263 Datasheet Cover
GA05JT12-263 Datasheet Page 2 GA05JT12-263 Datasheet Page 3 GA05JT12-263 Datasheet Page 4 GA05JT12-263 Datasheet Page 5 GA05JT12-263 Datasheet Page 6 GA05JT12-263 Datasheet Page 7 GA05JT12-263 Datasheet Page 8 GA05JT12-263 Datasheet Page 9 GA05JT12-263 Datasheet Page 10 GA05JT12-263 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GA05JT12-263 Datasheet
  • where to find GA05JT12-263
  • GeneSiC Semiconductor

  • GeneSiC Semiconductor GA05JT12-263
  • GA05JT12-263 PDF Datasheet
  • GA05JT12-263 Stock

  • GA05JT12-263 Pinout
  • Datasheet GA05JT12-263
  • GA05JT12-263 Supplier

  • GeneSiC Semiconductor Distributor
  • GA05JT12-263 Price
  • GA05JT12-263 Distributor

GA05JT12-263 Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)106W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

The Products You May Be Interested In

SIA483ADJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10.6A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

+16V, -20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.4W (Ta), 17.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

FDB8441-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPU10N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1358pF @ 15V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO251-3-1

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

2SJ599(0)-ZK-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRFP044N

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

749022015

749022015

Wurth Electronics

TRANSFORMER LAN 10/100/1000 SMD

STL7N10F7

STL7N10F7

STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

BTS4140NHUMA1

BTS4140NHUMA1

Infineon Technologies

IC PWR SWITCH 62V HISID SOT223-4

SMAZ18-13-F

SMAZ18-13-F

Diodes Incorporated

DIODE ZENER 18V 1W SMA

MAX17205G+T

MAX17205G+T

Maxim Integrated

IC BATTERY MULTIFUNCTION 14TDFN

BC184B

BC184B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

93AA66B-I/SN

93AA66B-I/SN

Microchip Technology

IC EEPROM 4K SPI 2MHZ 8SOIC

SMBJ14A-13-F

SMBJ14A-13-F

Diodes Incorporated

TVS DIODE 14V 23.2V SMB

MT25QL512ABB8ESF-0SIT

MT25QL512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOP2

HDT0001

HDT0001

C&K

SWITCH DETECTOR SPST-NO 1MA 5V

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP