GA10JT12-263
For Reference Only
| Part Number | GA10JT12-263 |
| PNEDA Part # | GA10JT12-263 |
| Description | TRANS SJT 1200V 25A |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 17,196 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GA10JT12-263 Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | GA10JT12-263 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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GA10JT12-263 Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1403pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | - |
| Package / Case | - |
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