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GA10SICP12-263

GA10SICP12-263

For Reference Only

Part Number GA10SICP12-263
PNEDA Part # GA10SICP12-263
Description TRANS SJT 1200V 25A TO263-7
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GA10SICP12-263 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGA10SICP12-263
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GA10SICP12-263, GA10SICP12-263 Datasheet (Total Pages: 13, Size: 1,461.01 KB)
PDFGA10SICP12-263 Datasheet Cover
GA10SICP12-263 Datasheet Page 2 GA10SICP12-263 Datasheet Page 3 GA10SICP12-263 Datasheet Page 4 GA10SICP12-263 Datasheet Page 5 GA10SICP12-263 Datasheet Page 6 GA10SICP12-263 Datasheet Page 7 GA10SICP12-263 Datasheet Page 8 GA10SICP12-263 Datasheet Page 9 GA10SICP12-263 Datasheet Page 10 GA10SICP12-263 Datasheet Page 11

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GA10SICP12-263 Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs100mOhm @ 10A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1403pF @ 800V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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