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GA20JT12-263

GA20JT12-263

For Reference Only

Part Number GA20JT12-263
PNEDA Part # GA20JT12-263
Description TRANS SJT 1200V 45A
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 7,794
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GA20JT12-263 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGA20JT12-263
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GA20JT12-263, GA20JT12-263 Datasheet (Total Pages: 12, Size: 1,299.6 KB)
PDFGA20JT12-263 Datasheet Cover
GA20JT12-263 Datasheet Page 2 GA20JT12-263 Datasheet Page 3 GA20JT12-263 Datasheet Page 4 GA20JT12-263 Datasheet Page 5 GA20JT12-263 Datasheet Page 6 GA20JT12-263 Datasheet Page 7 GA20JT12-263 Datasheet Page 8 GA20JT12-263 Datasheet Page 9 GA20JT12-263 Datasheet Page 10 GA20JT12-263 Datasheet Page 11

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GA20JT12-263 Specifications

ManufacturerGeneSiC Semiconductor
Series-
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs60mOhm @ 20A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3091pF @ 800V
FET Feature-
Power Dissipation (Max)282W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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