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GB10SLT12-252

GB10SLT12-252

For Reference Only

Part Number GB10SLT12-252
PNEDA Part # GB10SLT12-252
Description DIODE SCHOTTKY 1.2KV 10A TO252
Manufacturer GeneSiC Semiconductor
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GB10SLT12-252 Resources

Brand GeneSiC Semiconductor
ECAD Module ECAD
Mfr. Part NumberGB10SLT12-252
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
GB10SLT12-252, GB10SLT12-252 Datasheet (Total Pages: 7, Size: 635.54 KB)
PDFGB10SLT12-252 Datasheet Cover
GB10SLT12-252 Datasheet Page 2 GB10SLT12-252 Datasheet Page 3 GB10SLT12-252 Datasheet Page 4 GB10SLT12-252 Datasheet Page 5 GB10SLT12-252 Datasheet Page 6 GB10SLT12-252 Datasheet Page 7

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GB10SLT12-252 Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If2V @ 10A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr250µA @ 1200V
Capacitance @ Vr, F520pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Operating Temperature - Junction-55°C ~ 175°C

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