GP10TE-M3/54
For Reference Only
| Part Number | GP10TE-M3/54 |
| PNEDA Part # | GP10TE-M3-54 |
| Description | DIODE GEN PURPOSE DO204AL |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,366 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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GP10TE-M3/54 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | GP10TE-M3/54 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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GP10TE-M3/54 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Comchip Technology Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 100mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 80V Capacitance @ Vr, F 3pF @ 0.5V, 1MHz Mounting Type Surface Mount Package / Case 0402 (1005 Metric) Supplier Device Package 0402/SOD-923F Operating Temperature - Junction 125°C (Max) |
Manufacturer Rohm Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 810mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3µA @ 150V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package PMDTM Operating Temperature - Junction 150°C (Max) |
Manufacturer Diodes Incorporated Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.5V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 10µA @ 500V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-41 Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 25V Current - Average Rectified (Io) 150mA (DC) Voltage - Forward (Vf) (Max) @ If 1.1V @ 10mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100pA @ 25V Capacitance @ Vr, F 3.5pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 175°C (Max) |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) 2200A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 150mA @ 2000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AC, K-PUK Supplier Device Package BG-D7526K0-1 Operating Temperature - Junction -40°C ~ 160°C |
