Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GP1M008A050FG

GP1M008A050FG

For Reference Only

Part Number GP1M008A050FG
PNEDA Part # GP1M008A050FG
Description MOSFET N-CH 500V 8A TO220F
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 5,850
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M008A050FG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M008A050FG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M008A050FG, GP1M008A050FG Datasheet (Total Pages: 7, Size: 384.34 KB)
PDFGP1M008A050HG Datasheet Cover
GP1M008A050HG Datasheet Page 2 GP1M008A050HG Datasheet Page 3 GP1M008A050HG Datasheet Page 4 GP1M008A050HG Datasheet Page 5 GP1M008A050HG Datasheet Page 6 GP1M008A050HG Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GP1M008A050FG Datasheet
  • where to find GP1M008A050FG
  • Global Power Technologies Group

  • Global Power Technologies Group GP1M008A050FG
  • GP1M008A050FG PDF Datasheet
  • GP1M008A050FG Stock

  • GP1M008A050FG Pinout
  • Datasheet GP1M008A050FG
  • GP1M008A050FG Supplier

  • Global Power Technologies Group Distributor
  • GP1M008A050FG Price
  • GP1M008A050FG Distributor

GP1M008A050FG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds937pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

JANTXV2N6784

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/556

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-205AF (TO-39)

Package / Case

TO-205AF Metal Can

DMG3418L-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

464.3pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

SI3867DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

51mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

2A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

6.5Ohm @ 1A, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

110nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3650pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

568W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

SIA418DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

Recently Sold

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

HCPL-0201-500E

HCPL-0201-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 8SO

HX5008NLT

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

MIC29302BU

MIC29302BU

Microchip Technology

IC REG LINEAR POS ADJ 3A TO263-5

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

BSS138

BSS138

MICROSS/On Semiconductor

MOSFET N-CH 50V 220MA DIE

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC

MAX8216ESD+

MAX8216ESD+

Maxim Integrated

IC MONITOR VOLT MPU 14-SOIC

TNY290PG

TNY290PG

Power Integrations

IC OFF-LINE SWITCH PWM 8DIP

CY2305CSXI-1H

CY2305CSXI-1H

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC