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GP1M009A020HG

GP1M009A020HG

For Reference Only

Part Number GP1M009A020HG
PNEDA Part # GP1M009A020HG
Description MOSFET N-CH 200V 9A TO220
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M009A020HG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M009A020HG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M009A020HG, GP1M009A020HG Datasheet (Total Pages: 7, Size: 405.55 KB)
PDFGP1M009A020FG Datasheet Cover
GP1M009A020FG Datasheet Page 2 GP1M009A020FG Datasheet Page 3 GP1M009A020FG Datasheet Page 4 GP1M009A020FG Datasheet Page 5 GP1M009A020FG Datasheet Page 6 GP1M009A020FG Datasheet Page 7

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GP1M009A020HG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds414pF @ 25V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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