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GP1M010A060H

GP1M010A060H

For Reference Only

Part Number GP1M010A060H
PNEDA Part # GP1M010A060H
Description MOSFET N-CH 600V 10A TO220
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M010A060H Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M010A060H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M010A060H, GP1M010A060H Datasheet (Total Pages: 7, Size: 387.2 KB)
PDFGP1M010A060H Datasheet Cover
GP1M010A060H Datasheet Page 2 GP1M010A060H Datasheet Page 3 GP1M010A060H Datasheet Page 4 GP1M010A060H Datasheet Page 5 GP1M010A060H Datasheet Page 6 GP1M010A060H Datasheet Page 7

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GP1M010A060H Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1891pF @ 25V
FET Feature-
Power Dissipation (Max)198W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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