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GP1M018A020PG

GP1M018A020PG

For Reference Only

Part Number GP1M018A020PG
PNEDA Part # GP1M018A020PG
Description MOSFET N-CH 200V 18A IPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 3,186
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M018A020PG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M018A020PG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M018A020PG, GP1M018A020PG Datasheet (Total Pages: 6, Size: 506.32 KB)
PDFGP1M018A020PG Datasheet Cover
GP1M018A020PG Datasheet Page 2 GP1M018A020PG Datasheet Page 3 GP1M018A020PG Datasheet Page 4 GP1M018A020PG Datasheet Page 5 GP1M018A020PG Datasheet Page 6

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GP1M018A020PG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 25V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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