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GP2M002A060HG

GP2M002A060HG

For Reference Only

Part Number GP2M002A060HG
PNEDA Part # GP2M002A060HG
Description MOSFET N-CH 600V 2A TO220
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 3,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M002A060HG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M002A060HG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M002A060HG, GP2M002A060HG Datasheet (Total Pages: 7, Size: 405.69 KB)
PDFGP2M002A060FG Datasheet Cover
GP2M002A060FG Datasheet Page 2 GP2M002A060FG Datasheet Page 3 GP2M002A060FG Datasheet Page 4 GP2M002A060FG Datasheet Page 5 GP2M002A060FG Datasheet Page 6 GP2M002A060FG Datasheet Page 7

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GP2M002A060HG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
FET Feature-
Power Dissipation (Max)52.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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