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GP2M004A060PG

GP2M004A060PG

For Reference Only

Part Number GP2M004A060PG
PNEDA Part # GP2M004A060PG
Description MOSFET N-CH 600V 4A IPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M004A060PG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M004A060PG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M004A060PG, GP2M004A060PG Datasheet (Total Pages: 6, Size: 531.88 KB)
PDFGP2M004A060PG Datasheet Cover
GP2M004A060PG Datasheet Page 2 GP2M004A060PG Datasheet Page 3 GP2M004A060PG Datasheet Page 4 GP2M004A060PG Datasheet Page 5 GP2M004A060PG Datasheet Page 6

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GP2M004A060PG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds545pF @ 25V
FET Feature-
Power Dissipation (Max)86.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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