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GP2M007A065HG

GP2M007A065HG

For Reference Only

Part Number GP2M007A065HG
PNEDA Part # GP2M007A065HG
Description MOSFET N-CH 650V 6.5A TO220
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 3,294
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M007A065HG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M007A065HG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M007A065HG, GP2M007A065HG Datasheet (Total Pages: 7, Size: 416.39 KB)
PDFGP2M007A065HG Datasheet Cover
GP2M007A065HG Datasheet Page 2 GP2M007A065HG Datasheet Page 3 GP2M007A065HG Datasheet Page 4 GP2M007A065HG Datasheet Page 5 GP2M007A065HG Datasheet Page 6 GP2M007A065HG Datasheet Page 7

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GP2M007A065HG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1072pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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