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GP2M008A060PG

GP2M008A060PG

For Reference Only

Part Number GP2M008A060PG
PNEDA Part # GP2M008A060PG
Description MOSFET N-CH 600V 7.5A IPAK
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M008A060PG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M008A060PG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M008A060PG, GP2M008A060PG Datasheet (Total Pages: 6, Size: 540.45 KB)
PDFGP2M008A060PGH Datasheet Cover
GP2M008A060PGH Datasheet Page 2 GP2M008A060PGH Datasheet Page 3 GP2M008A060PGH Datasheet Page 4 GP2M008A060PGH Datasheet Page 5 GP2M008A060PGH Datasheet Page 6

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GP2M008A060PG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1063pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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