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GP2M011A090NG

GP2M011A090NG

For Reference Only

Part Number GP2M011A090NG
PNEDA Part # GP2M011A090NG
Description MOSFET N-CH 900V 11A TO3PN
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 7,668
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M011A090NG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M011A090NG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M011A090NG, GP2M011A090NG Datasheet (Total Pages: 5, Size: 591.23 KB)
PDFGP2M011A090NG Datasheet Cover
GP2M011A090NG Datasheet Page 2 GP2M011A090NG Datasheet Page 3 GP2M011A090NG Datasheet Page 4 GP2M011A090NG Datasheet Page 5

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GP2M011A090NG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3240pF @ 25V
FET Feature-
Power Dissipation (Max)416W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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