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GP2M012A080NG

GP2M012A080NG

For Reference Only

Part Number GP2M012A080NG
PNEDA Part # GP2M012A080NG
Description MOSFET N-CH 800V 12A TO3PN
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M012A080NG Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M012A080NG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M012A080NG, GP2M012A080NG Datasheet (Total Pages: 5, Size: 587.46 KB)
PDFGP2M012A080NG Datasheet Cover
GP2M012A080NG Datasheet Page 2 GP2M012A080NG Datasheet Page 3 GP2M012A080NG Datasheet Page 4 GP2M012A080NG Datasheet Page 5

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GP2M012A080NG Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs79nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3370pF @ 25V
FET Feature-
Power Dissipation (Max)416W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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