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GPAS1006 MNG

GPAS1006 MNG

For Reference Only

Part Number GPAS1006 MNG
PNEDA Part # GPAS1006-MNG
Description DIODE GEN PURP 800V 10A TO263AB
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GPAS1006 MNG Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberGPAS1006 MNG
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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GPAS1006 MNG Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.1V @ 10A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr5µA @ 800V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D²PAK)
Operating Temperature - Junction-55°C ~ 150°C

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