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GSID100A120T2C1

GSID100A120T2C1

For Reference Only

Part Number GSID100A120T2C1
PNEDA Part # GSID100A120T2C1
Description SILICON IGBT MODULES
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 2,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GSID100A120T2C1 Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGSID100A120T2C1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
GSID100A120T2C1, GSID100A120T2C1 Datasheet (Total Pages: 8, Size: 351.63 KB)
PDFGSID100A120T2C1 Datasheet Cover
GSID100A120T2C1 Datasheet Page 2 GSID100A120T2C1 Datasheet Page 3 GSID100A120T2C1 Datasheet Page 4 GSID100A120T2C1 Datasheet Page 5 GSID100A120T2C1 Datasheet Page 6 GSID100A120T2C1 Datasheet Page 7 GSID100A120T2C1 Datasheet Page 8

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GSID100A120T2C1 Specifications

ManufacturerGlobal Power Technologies Group
SeriesAmp+™
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Power - Max640W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce13.7nF @ 25V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Input Capacitance (Cies) @ Vce

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