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GSID200A170S3B1

GSID200A170S3B1

For Reference Only

Part Number GSID200A170S3B1
PNEDA Part # GSID200A170S3B1
Description SILICON IGBT MODULES
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GSID200A170S3B1 Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGSID200A170S3B1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
GSID200A170S3B1, GSID200A170S3B1 Datasheet (Total Pages: 8, Size: 359 KB)
PDFGSID200A170S3B1 Datasheet Cover
GSID200A170S3B1 Datasheet Page 2 GSID200A170S3B1 Datasheet Page 3 GSID200A170S3B1 Datasheet Page 4 GSID200A170S3B1 Datasheet Page 5 GSID200A170S3B1 Datasheet Page 6 GSID200A170S3B1 Datasheet Page 7 GSID200A170S3B1 Datasheet Page 8

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GSID200A170S3B1 Specifications

ManufacturerGlobal Power Technologies Group
SeriesAmp+™
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)400A
Power - Max1630W
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 200A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce26nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseD-3 Module
Supplier Device PackageD3

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