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GT50J121(Q)

GT50J121(Q)

For Reference Only

Part Number GT50J121(Q)
PNEDA Part # GT50J121-Q
Description IGBT 600V 50A 240W TO3P LH
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT50J121(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT50J121(Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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GT50J121(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
Power - Max240W
Switching Energy1.3mJ (on), 1.34mJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 50A, 13Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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