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GT60N321(Q)

GT60N321(Q)

For Reference Only

Part Number GT60N321(Q)
PNEDA Part # GT60N321-Q
Description IGBT 1000V 60A 170W TO3P LH
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT60N321(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT60N321(Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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GT60N321(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5µs
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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