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GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

For Reference Only

Part Number GT8G133(TE12L,Q)
PNEDA Part # GT8G133-TE12L-Q
Description IGBT 400V 600MW 8TSSOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT8G133(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT8G133(TE12L,Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
GT8G133(TE12L, GT8G133(TE12L Datasheet (Total Pages: 7, Size: 221.77 KB)
PDFGT8G133(TE12L Datasheet Cover
GT8G133(TE12L Datasheet Page 2 GT8G133(TE12L Datasheet Page 3 GT8G133(TE12L Datasheet Page 4 GT8G133(TE12L Datasheet Page 5 GT8G133(TE12L Datasheet Page 6 GT8G133(TE12L Datasheet Page 7

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GT8G133(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.9V @ 4V, 150A
Power - Max600mW
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C1.7µs/2µs
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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