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GWM120-0075X1-SMDSAM

GWM120-0075X1-SMDSAM

For Reference Only

Part Number GWM120-0075X1-SMDSAM
PNEDA Part # GWM120-0075X1-SMDSAM
Description MOSFET 6N-CH 75V 110A ISOPLUS
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GWM120-0075X1-SMDSAM Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberGWM120-0075X1-SMDSAM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
GWM120-0075X1-SMDSAM, GWM120-0075X1-SMDSAM Datasheet (Total Pages: 6, Size: 629.8 KB)
PDFGWM120-0075X1-SMDSAM Datasheet Cover
GWM120-0075X1-SMDSAM Datasheet Page 2 GWM120-0075X1-SMDSAM Datasheet Page 3 GWM120-0075X1-SMDSAM Datasheet Page 4 GWM120-0075X1-SMDSAM Datasheet Page 5 GWM120-0075X1-SMDSAM Datasheet Page 6

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GWM120-0075X1-SMDSAM Specifications

ManufacturerIXYS
Series-
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C110A
Rds On (Max) @ Id, Vgs4.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case17-SMD, Gull Wing
Supplier Device PackageISOPLUS-DIL™

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Logic Level Gate

Drain to Source Voltage (Vdss)

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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