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H11A817BW

H11A817BW

For Reference Only

Part Number H11A817BW
PNEDA Part # H11A817BW
Description OPTOISO 5.3KV TRANSISTOR 4DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11A817BW Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11A817BW
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11A817BW, H11A817BW Datasheet (Total Pages: 9, Size: 85.1 KB)
PDFH11A617B300 Datasheet Cover
H11A617B300 Datasheet Page 2 H11A617B300 Datasheet Page 3 H11A617B300 Datasheet Page 4 H11A617B300 Datasheet Page 5 H11A617B300 Datasheet Page 6 H11A617B300 Datasheet Page 7 H11A617B300 Datasheet Page 8 H11A617B300 Datasheet Page 9

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H11A817BW Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation5300Vrms
Current Transfer Ratio (Min)130% @ 5mA
Current Transfer Ratio (Max)260% @ 5mA
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)2.4µs, 2.4µs
Input TypeDC
Output TypeTransistor
Voltage - Output (Max)70V
Current - Output / Channel50mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)50mA
Vce Saturation (Max)200mV
Operating Temperature-55°C ~ 100°C
Mounting TypeThrough Hole
Package / Case4-DIP (0.400", 10.16mm)
Supplier Device Package4-DIP

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