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H11F1TVM

H11F1TVM

For Reference Only

Part Number H11F1TVM
PNEDA Part # H11F1TVM
Description OPTOISOLTR 7.5KV PHOTO FET 6-DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,836
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11F1TVM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11F1TVM
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11F1TVM, H11F1TVM Datasheet (Total Pages: 14, Size: 432.27 KB)
PDFH11F2M Datasheet Cover
H11F2M Datasheet Page 2 H11F2M Datasheet Page 3 H11F2M Datasheet Page 4 H11F2M Datasheet Page 5 H11F2M Datasheet Page 6 H11F2M Datasheet Page 7 H11F2M Datasheet Page 8 H11F2M Datasheet Page 9 H11F2M Datasheet Page 10 H11F2M Datasheet Page 11

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H11F1TVM Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation7500Vpk
Current Transfer Ratio (Min)-
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)45µs, 45µs (Max)
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeMOSFET
Voltage - Output (Max)30V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)-
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.400", 10.16mm)
Supplier Device Package6-DIP

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