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H11G2TVM

H11G2TVM

For Reference Only

Part Number H11G2TVM
PNEDA Part # H11G2TVM
Description OPTOISO 4.17KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11G2TVM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11G2TVM
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output

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H11G2TVM Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)1000% @ 10mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)80V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.400", 10.16mm)
Supplier Device Package6-DIP

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