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H11G3M

H11G3M

For Reference Only

Part Number H11G3M
PNEDA Part # H11G3M
Description OPTOISO 7.5KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11G3M Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11G3M
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11G3M, H11G3M Datasheet (Total Pages: 8, Size: 228.96 KB)
PDFH11G3TM Datasheet Cover
H11G3TM Datasheet Page 2 H11G3TM Datasheet Page 3 H11G3TM Datasheet Page 4 H11G3TM Datasheet Page 5 H11G3TM Datasheet Page 6 H11G3TM Datasheet Page 7 H11G3TM Datasheet Page 8

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H11G3M Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation7500Vpk
Current Transfer Ratio (Min)200% @ 1mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)5µs, 100µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)55V
Current - Output / Channel-
Voltage - Forward (Vf) (Typ)1.3V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)1.2V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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