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HAT2165H-EL-E

HAT2165H-EL-E

For Reference Only

Part Number HAT2165H-EL-E
PNEDA Part # HAT2165H-EL-E
Description MOSFET N-CH 30V 55A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HAT2165H-EL-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberHAT2165H-EL-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HAT2165H-EL-E, HAT2165H-EL-E Datasheet (Total Pages: 10, Size: 102.56 KB)
PDFHAT2165H-EL-E Datasheet Cover
HAT2165H-EL-E Datasheet Page 2 HAT2165H-EL-E Datasheet Page 3 HAT2165H-EL-E Datasheet Page 4 HAT2165H-EL-E Datasheet Page 5 HAT2165H-EL-E Datasheet Page 6 HAT2165H-EL-E Datasheet Page 7 HAT2165H-EL-E Datasheet Page 8 HAT2165H-EL-E Datasheet Page 9 HAT2165H-EL-E Datasheet Page 10

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HAT2165H-EL-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5180pF @ 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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