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HER306G B0G

HER306G B0G

For Reference Only

Part Number HER306G B0G
PNEDA Part # HER306G-B0G
Description DIODE GEN PURP 600V 3A DO201AD
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HER306G B0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberHER306G B0G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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HER306G B0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.7V @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F35pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package / CaseDO-201AD, Axial
Supplier Device PackageDO-201AD
Operating Temperature - Junction-55°C ~ 150°C

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