Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HGT1S7N60C3DS9A

HGT1S7N60C3DS9A

For Reference Only

Part Number HGT1S7N60C3DS9A
PNEDA Part # HGT1S7N60C3DS9A
Description IGBT 600V 14A 60W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S7N60C3DS9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S7N60C3DS9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S7N60C3DS9A, HGT1S7N60C3DS9A Datasheet (Total Pages: 9, Size: 557.88 KB)
PDFHGTP7N60C3D Datasheet Cover
HGTP7N60C3D Datasheet Page 2 HGTP7N60C3D Datasheet Page 3 HGTP7N60C3D Datasheet Page 4 HGTP7N60C3D Datasheet Page 5 HGTP7N60C3D Datasheet Page 6 HGTP7N60C3D Datasheet Page 7 HGTP7N60C3D Datasheet Page 8 HGTP7N60C3D Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HGT1S7N60C3DS9A Datasheet
  • where to find HGT1S7N60C3DS9A
  • ON Semiconductor

  • ON Semiconductor HGT1S7N60C3DS9A
  • HGT1S7N60C3DS9A PDF Datasheet
  • HGT1S7N60C3DS9A Stock

  • HGT1S7N60C3DS9A Pinout
  • Datasheet HGT1S7N60C3DS9A
  • HGT1S7N60C3DS9A Supplier

  • ON Semiconductor Distributor
  • HGT1S7N60C3DS9A Price
  • HGT1S7N60C3DS9A Distributor

HGT1S7N60C3DS9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Current - Collector Pulsed (Icm)56A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 7A
Power - Max60W
Switching Energy165µJ (on), 600µJ (off)
Input TypeStandard
Gate Charge23nC
Td (on/off) @ 25°C-
Test Condition480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)37ns
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

The Products You May Be Interested In

IRG7CH44K10EF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 25A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

160nC

Td (on/off) @ 25°C

60ns/230ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

IHY20N135R3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1350V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 20A

Power - Max

310W

Switching Energy

1.3mJ (off)

Input Type

Standard

Gate Charge

195nC

Td (on/off) @ 25°C

-/335ns

Test Condition

600V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

PG-TO247HC-3

FGH25T120SMD-F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Power - Max

428W

Switching Energy

1.74mJ (on), 560µJ (off)

Input Type

Standard

Gate Charge

225nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

600V, 25A, 23Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

IRG4RC10STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

140µJ (on), 2.58mJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

25ns/630ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

600W

Switching Energy

720µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

64nC

Td (on/off) @ 25°C

24ns/62ns

Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

Recently Sold

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

SMBJ45A-E3/52

SMBJ45A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 45V 72.7V DO214AA

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD

MC33161PG

MC33161PG

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8DIP

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

NFM21CC223R1H3D

NFM21CC223R1H3D

Murata

CAP FEEDTHRU 0.022UF 50V 0805

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

IRF7853PBF

IRF7853PBF

Infineon Technologies

MOSFET N-CH 100V 8.3A 8-SOIC

MMBZ5254B

MMBZ5254B

ON Semiconductor

DIODE ZENER 27V 350MW SOT23-3

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120