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HGTG12N60B3

HGTG12N60B3

For Reference Only

Part Number HGTG12N60B3
PNEDA Part # HGTG12N60B3
Description IGBT 600V 27A 104W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG12N60B3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG12N60B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTG12N60B3, HGTG12N60B3 Datasheet (Total Pages: 8, Size: 198.54 KB)
PDFHGTG12N60B3 Datasheet Cover
HGTG12N60B3 Datasheet Page 2 HGTG12N60B3 Datasheet Page 3 HGTG12N60B3 Datasheet Page 4 HGTG12N60B3 Datasheet Page 5 HGTG12N60B3 Datasheet Page 6 HGTG12N60B3 Datasheet Page 7 HGTG12N60B3 Datasheet Page 8

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HGTG12N60B3 Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)27A
Current - Collector Pulsed (Icm)110A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Power - Max104W
Switching Energy150µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge51nC
Td (on/off) @ 25°C26ns/150ns
Test Condition480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Test Condition

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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