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HGTG30N60B3D

HGTG30N60B3D

For Reference Only

Part Number HGTG30N60B3D
PNEDA Part # HGTG30N60B3D
Description IGBT 600V 60A 208W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,914
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG30N60B3D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG30N60B3D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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HGTG30N60B3D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)220A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Power - Max208W
Switching Energy550µJ (on), 680µJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C36ns/137ns
Test Condition480V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)55ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

278W

Switching Energy

1.3mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

20ns/90ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

29ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263HV

IRGS10B60KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 10A

Power - Max

156W

Switching Energy

140µJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

30ns/230ns

Test Condition

400V, 10A, 47Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

130A

Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 36A

Power - Max

600W

Switching Energy

1.3mJ (on), 370µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

22ns/80ns

Test Condition

400V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263

IRGP4760PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

144A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 48A

Power - Max

325W

Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

145nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Power - Max

150W

Switching Energy

240µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

15ns/75ns

Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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