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HGTG30N60C3D

HGTG30N60C3D

For Reference Only

Part Number HGTG30N60C3D
PNEDA Part # HGTG30N60C3D
Description IGBT 600V 63A 208W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,188
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG30N60C3D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG30N60C3D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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HGTG30N60C3D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)63A
Current - Collector Pulsed (Icm)252A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 30A
Power - Max208W
Switching Energy1.05mJ (on), 2.5mJ (off)
Input TypeStandard
Gate Charge162nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)60ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

115µJ (on), 195µJ (off)

Input Type

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Td (on/off) @ 25°C

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Package / Case

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