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HGTP12N60C3

HGTP12N60C3

For Reference Only

Part Number HGTP12N60C3
PNEDA Part # HGTP12N60C3
Description IGBT 600V 24A 104W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTP12N60C3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTP12N60C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTP12N60C3, HGTP12N60C3 Datasheet (Total Pages: 7, Size: 172.1 KB)
PDFHGTP12N60C3 Datasheet Cover
HGTP12N60C3 Datasheet Page 2 HGTP12N60C3 Datasheet Page 3 HGTP12N60C3 Datasheet Page 4 HGTP12N60C3 Datasheet Page 5 HGTP12N60C3 Datasheet Page 6 HGTP12N60C3 Datasheet Page 7

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HGTP12N60C3 Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)24A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 12A
Power - Max104W
Switching Energy380µJ (on), 900µJ (off)
Input TypeStandard
Gate Charge48nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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