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HGTP2N120CN

HGTP2N120CN

For Reference Only

Part Number HGTP2N120CN
PNEDA Part # HGTP2N120CN
Description IGBT 1200V 13A 104W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,428
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTP2N120CN Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTP2N120CN
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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HGTP2N120CN Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Power - Max104W
Switching Energy96µJ (on), 355µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C25ns/205ns
Test Condition960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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