HN1B01FU-Y(L,F,T)
For Reference Only
| Part Number | HN1B01FU-Y(L,F,T) |
| PNEDA Part # | HN1B01FU-Y-L-F-T |
| Description | TRANS NPN/PNP 50V 0.15A US6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 4,266 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HN1B01FU-Y(L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | HN1B01FU-Y(L,F,T) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HN1B01FU-Y(L,F,T) Datasheet
- where to find HN1B01FU-Y(L,F,T)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage HN1B01FU-Y(L,F,T)
- HN1B01FU-Y(L,F,T) PDF Datasheet
- HN1B01FU-Y(L,F,T) Stock
- HN1B01FU-Y(L,F,T) Pinout
- Datasheet HN1B01FU-Y(L,F,T)
- HN1B01FU-Y(L,F,T) Supplier
- Toshiba Semiconductor and Storage Distributor
- HN1B01FU-Y(L,F,T) Price
- HN1B01FU-Y(L,F,T) Distributor
HN1B01FU-Y(L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN, PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - Transistor Type NPN, PNP Darlington (Dual) Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A Current - Collector Cutoff (Max) 10µA DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 5V Power - Max 2.75W Frequency - Transition 150MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-223-8 Supplier Device Package SM8 |
Manufacturer Central Semiconductor Corp Series - Transistor Type 4 PNP (Quad) Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.6V @ 30mA, 300mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 300mA, 10V Power - Max 650mW Frequency - Transition 200MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 14-DIP (0.300", 7.62mm) Supplier Device Package TO-116 |
Manufacturer Microsemi Corporation Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Power - Max 2.12W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
Manufacturer Panasonic Electronic Components Series - Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 10V Power - Max 300mW Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package Mini6-G4-B |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/355 Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
