HN4C51J(TE85L,F)
For Reference Only
| Part Number | HN4C51J(TE85L,F) |
| PNEDA Part # | HN4C51J-TE85L-F |
| Description | TRANS 2NPN 120V 0.1A SMV |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 2,610 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HN4C51J(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | HN4C51J(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HN4C51J(TE85L,F) Datasheet
- where to find HN4C51J(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage HN4C51J(TE85L,F)
- HN4C51J(TE85L,F) PDF Datasheet
- HN4C51J(TE85L,F) Stock
- HN4C51J(TE85L,F) Pinout
- Datasheet HN4C51J(TE85L,F)
- HN4C51J(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- HN4C51J(TE85L,F) Price
- HN4C51J(TE85L,F) Distributor
HN4C51J(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 NPN (Dual) Common Base |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74A, SOT-753 |
| Supplier Device Package | SMV |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 3.5A Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 200mV @ 50mA, 3.5A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V Power - Max 1.04W Frequency - Transition 112MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package 8-MSOP |
Manufacturer Rohm Semiconductor Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer STMicroelectronics Series - Transistor Type 7 NPN Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V Power - Max - Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SO |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN, PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 2V Power - Max 150mW Frequency - Transition 400MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-SMD Supplier Device Package VMT6 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/336 Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
