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HS3J M6G

HS3J M6G

For Reference Only

Part Number HS3J M6G
PNEDA Part # HS3J-M6G
Description DIODE GEN PURP 600V 3A DO214AB
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HS3J M6G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberHS3J M6G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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HS3J M6G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.7V @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F50pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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