HSM835GE3/TR13
For Reference Only
| Part Number | HSM835GE3/TR13 |
| PNEDA Part # | HSM835GE3-TR13 |
| Description | DIODE SCHOTTKY 35V 8A DO215AB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,760 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HSM835GE3/TR13 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | HSM835GE3/TR13 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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HSM835GE3/TR13 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 620mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 250µA @ 35V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-215AB, SMC Gull Wing |
| Supplier Device Package | DO-215AB |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer ON Semiconductor Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
