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HUF75631S3ST

HUF75631S3ST

For Reference Only

Part Number HUF75631S3ST
PNEDA Part # HUF75631S3ST
Description MOSFET N-CH 100V 33A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 17,460
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75631S3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75631S3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75631S3ST, HUF75631S3ST Datasheet (Total Pages: 12, Size: 801.15 KB)
PDFHUF75631S3ST Datasheet Cover
HUF75631S3ST Datasheet Page 2 HUF75631S3ST Datasheet Page 3 HUF75631S3ST Datasheet Page 4 HUF75631S3ST Datasheet Page 5 HUF75631S3ST Datasheet Page 6 HUF75631S3ST Datasheet Page 7 HUF75631S3ST Datasheet Page 8 HUF75631S3ST Datasheet Page 9 HUF75631S3ST Datasheet Page 10 HUF75631S3ST Datasheet Page 11

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HUF75631S3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs79nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1220pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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