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HUF75639G3

HUF75639G3

For Reference Only

Part Number HUF75639G3
PNEDA Part # HUF75639G3
Description MOSFET N-CH 100V 56A TO-247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75639G3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75639G3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75639G3, HUF75639G3 Datasheet (Total Pages: 10, Size: 550.35 KB)
PDFHUF75639S3S Datasheet Cover
HUF75639S3S Datasheet Page 2 HUF75639S3S Datasheet Page 3 HUF75639S3S Datasheet Page 4 HUF75639S3S Datasheet Page 5 HUF75639S3S Datasheet Page 6 HUF75639S3S Datasheet Page 7 HUF75639S3S Datasheet Page 8 HUF75639S3S Datasheet Page 9 HUF75639S3S Datasheet Page 10

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HUF75639G3 Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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