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HUF75925D3ST

HUF75925D3ST

For Reference Only

Part Number HUF75925D3ST
PNEDA Part # HUF75925D3ST
Description MOSFET N-CH 200V 11A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75925D3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75925D3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75925D3ST, HUF75925D3ST Datasheet (Total Pages: 10, Size: 263.8 KB)
PDFHUF75925D3ST Datasheet Cover
HUF75925D3ST Datasheet Page 2 HUF75925D3ST Datasheet Page 3 HUF75925D3ST Datasheet Page 4 HUF75925D3ST Datasheet Page 5 HUF75925D3ST Datasheet Page 6 HUF75925D3ST Datasheet Page 7 HUF75925D3ST Datasheet Page 8 HUF75925D3ST Datasheet Page 9 HUF75925D3ST Datasheet Page 10

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HUF75925D3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs275mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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