Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HUF76429P3

HUF76429P3

For Reference Only

Part Number HUF76429P3
PNEDA Part # HUF76429P3
Description MOSFET N-CH 60V 47A TO-220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,848
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF76429P3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF76429P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF76429P3, HUF76429P3 Datasheet (Total Pages: 10, Size: 206.35 KB)
PDFHUF76429S3S Datasheet Cover
HUF76429S3S Datasheet Page 2 HUF76429S3S Datasheet Page 3 HUF76429S3S Datasheet Page 4 HUF76429S3S Datasheet Page 5 HUF76429S3S Datasheet Page 6 HUF76429S3S Datasheet Page 7 HUF76429S3S Datasheet Page 8 HUF76429S3S Datasheet Page 9 HUF76429S3S Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HUF76429P3 Datasheet
  • where to find HUF76429P3
  • ON Semiconductor

  • ON Semiconductor HUF76429P3
  • HUF76429P3 PDF Datasheet
  • HUF76429P3 Stock

  • HUF76429P3 Pinout
  • Datasheet HUF76429P3
  • HUF76429P3 Supplier

  • ON Semiconductor Distributor
  • HUF76429P3 Price
  • HUF76429P3 Distributor

HUF76429P3 Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

The Products You May Be Interested In

BFL4026-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.6Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3FS

Package / Case

TO-220-3 Full Pack

NP36P04KDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 56W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL5602STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIR668ADP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

93.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 50V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPDD60R150G7XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ G7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id

4V @ 260µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

902pF @ 400V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-HDSOP-10-1

Package / Case

10-PowerSOP Module

Recently Sold

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

R5F1076CGSP#V0

R5F1076CGSP#V0

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 20LSSOP

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

DLP11SN900HL2L

DLP11SN900HL2L

Murata

CMC 150MA 2LN 90 OHM SMD

ACPL-064L-500E

ACPL-064L-500E

Broadcom

OPTOISO 3.75KV 2CH PUSH PULL 8SO

CLF7045T-2R2N

CLF7045T-2R2N

TDK

FIXED IND 2.2UH 4.3A 14.6 MOHM

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5

FLZ6V8A

FLZ6V8A

ON Semiconductor

DIODE ZENER 6.5V 500MW SOD80

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

AZ1117EH-3.3TRG1

AZ1117EH-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

744770122

744770122

Wurth Electronics

FIXED IND 22UH 4.1A 43 MOHM SMD

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W