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HUFA75639S3ST-F085A

HUFA75639S3ST-F085A

For Reference Only

Part Number HUFA75639S3ST-F085A
PNEDA Part # HUFA75639S3ST-F085A
Description MOSFET N-CH 100V 56A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA75639S3ST-F085A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA75639S3ST-F085A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA75639S3ST-F085A, HUFA75639S3ST-F085A Datasheet (Total Pages: 7, Size: 806.43 KB)
PDFHUFA75639S3ST-F085A Datasheet Cover
HUFA75639S3ST-F085A Datasheet Page 2 HUFA75639S3ST-F085A Datasheet Page 3 HUFA75639S3ST-F085A Datasheet Page 4 HUFA75639S3ST-F085A Datasheet Page 5 HUFA75639S3ST-F085A Datasheet Page 6 HUFA75639S3ST-F085A Datasheet Page 7

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HUFA75639S3ST-F085A Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, UltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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